ASSESSMENT OF COMPENSATION RATIO IN HIGH-PURITY GAAS USING PHOTOLUMINESCENCE

Authors
OELGART G GRAMLICH S BERGUNDE T RICHTER E WEYERS M
Citation
G. Oelgart et al., ASSESSMENT OF COMPENSATION RATIO IN HIGH-PURITY GAAS USING PHOTOLUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 228-232
Citations number
16
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
44
Issue
1-3
Year of publication
1997
Pages
228 - 232
Database
ISI
SICI code
0921-5107(1997)44:1-3<228:AOCRIH>2.0.ZU;2-8
Abstract
The compensation ratio in high-purity n-type GaAs layers grown by meta l-organic vapour phase epitaxy was determined from low-temperature pho toluminescence measurements using the intensity ratio of the acceptor- and donor-bound excitonic transitions. The compensation ratio decreas es with increasing V-III ratio. At high V-III ratio, a total acceptor content of below 1 x 10(13) cm(-3) is found. (C) 1997 Elsevier Science S.A.