HOMOGENEITY OF THERMALLY ANNEALED FE-DOPED INP WAFERS

Authors
FORNARI R GILIOLI E SENTIRI A MIGNONI G AVELLA M JIMENEZ J ALVAREZ A GONZALEZ MA
Citation
R. Fornari et al., HOMOGENEITY OF THERMALLY ANNEALED FE-DOPED INP WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 233-237
Citations number
12
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
44
Issue
1-3
Year of publication
1997
Pages
233 - 237
Database
ISI
SICI code
0921-5107(1997)44:1-3<233:HOTAFI>2.0.ZU;2-0
Abstract
Iron doped InP wafers have been submitted to different thermal treatme nts. The consequences of these treatments in terms of electrical prope rties and homogeneity were studied by mean of different experimental t echniques: Hall effect, DSL and BCA chemical etching and scanning phot ocurrent. The electric compensation and the homogeneity are shown to b e improved by the thermal treatments. These results are discussed on t he bases of donor removal and iron migration to the wafer edges. (C) 1 997 Elsevier Science S.A.