CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY P-CDXHG1-XTE LAYERS USING THE PHOTOCONDUCTIVE EFFECT IN CROSSED ER-RIGHT-ARROW-PERPENDICULAR-TO(B)OVER-RIGHT-ARROW FIELDS

Authors
STUDENIKIN SA PROTASOV DY KOSTYUCHENKO VY VARAVIN VS
Citation
Sa. Studenikin et al., CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY P-CDXHG1-XTE LAYERS USING THE PHOTOCONDUCTIVE EFFECT IN CROSSED ER-RIGHT-ARROW-PERPENDICULAR-TO(B)OVER-RIGHT-ARROW FIELDS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 288-291
Citations number
7
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
44
Issue
1-3
Year of publication
1997
Pages
288 - 291
Database
ISI
SICI code
0921-5107(1997)44:1-3<288:COMEPL>2.0.ZU;2-Z
Abstract
The photoconductive effect in crossed (E) over right arrow perpendicul ar to (B) over right arrow fields together with the conventional photo -Hall method and multicarrier analysis were used for the characterizat ion of thin p-CdxHg1-xTe layers grown by molecular beam epitaxy (MBE). The described techniques provided information about recombination par ameters of the films: surface recombination velocities, bulk lifetime and diffusion length. (C) 1997 Elsevier Science S.A.