RAPID AND HIGH CONCENTRATED PERMEATION OF GA INTO INSB

Authors
KUMAGAWA M OHTSU H HAMAKAWA E KOYAMA T MASAKI M TAKAHASHI K LIFSHITS VG HAYAKAWA Y
Citation
M. Kumagawa et al., RAPID AND HIGH CONCENTRATED PERMEATION OF GA INTO INSB, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 301-303
Citations number
5
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
44
Issue
1-3
Year of publication
1997
Pages
301 - 303
Database
ISI
SICI code
0921-5107(1997)44:1-3<301:RAHCPO>2.0.ZU;2-K
Abstract
Ga permeation experiments were performed by putting an In-Ga-Sb soluti on into contact with InSb substrates under no crystal growth condition s. The permeation distances were 770, 1270 and 2750 mu m at 380, 430 a nd 480 degrees C, respectively. They increased with increased holding temperatures. The apparent diffusion coefficient of Ga ranged from 3 x 10(-7) to 5 - 10(-6) cm(2) s(-1). Rapid permeation occurred when the substrate came into contact with the solution. (C) 1997 Elsevier Scien ce S.A.