MATERIAL AND PROCESS-RELATED LIMITATIONS OF INP HEMT PERFORMANCE

Authors
VANHOVE M FINDERS J VANDERZANDEN K DERAEDT W VANROSSUM M BAEYENS Y SCHREURS D MENOZZI R
Citation
M. Vanhove et al., MATERIAL AND PROCESS-RELATED LIMITATIONS OF INP HEMT PERFORMANCE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 311-315
Citations number
17
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
44
Issue
1-3
Year of publication
1997
Pages
311 - 315
Database
ISI
SICI code
0921-5107(1997)44:1-3<311:MAPLOI>2.0.ZU;2-6
Abstract
We review the status and discuss the limitations of the device and mon olithic microwave integrated circuit technology for lattice-matched an d pseudomorphic HEMTs grown on InP substrates. Some technological aspe cts will be discussed including layer growth, ohmic contact fabricatio n, electron-beam defined mushroom-shaped gates, uniformity of gate-rec ess etching, buried gate contacts and the effect of silicon nitride pa ssivation on the device performance. Finally some device lifetime issu es are discussed, including preliminary results of low-frequency dispe rsion measurements and a study of hot electron degradation. (C) 1997 E lsevier Science S.A.