CORRELATION OF ELECTRICAL ANISOTROPIES OF HEMT DEVICES WITH DEFECT DISTRIBUTION AND INGAAS WELL ROUGHNESS

Authors
PEIRO F FERRER JC CORNET A MORANTE JR BECK M PY MA
Citation
F. Peiro et al., CORRELATION OF ELECTRICAL ANISOTROPIES OF HEMT DEVICES WITH DEFECT DISTRIBUTION AND INGAAS WELL ROUGHNESS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 325-329
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
44
Issue
1-3
Year of publication
1997
Pages
325 - 329
Database
ISI
SICI code
0921-5107(1997)44:1-3<325:COEAOH>2.0.ZU;2-E
Abstract
In this study we used transmission electron microscopy (TEM) to assess the origin of the electrical behaviour of two dimensional electron ga s (2DEG) in high electron mobility transistors (HEMTs) based upon InAl As/InGaAs heterostructures grown on InP substrates, as a function of t he growth temperature (T-g) of the InxGa1-xAs well. The highest mobili ty for a matched channel was obtained for an In0.53Ga0.47As layer grow n at 530 degrees C. Lower temperatures reduced the mobility values and led to higher mobilities for [1(1) over bar0$] due to the surface cor rugation along [110], induced by lateral decomposition of the InGaAs a t low growth temperatures. (C) 1997 Elsevier Science S.A.