HYDROGEN IN CARBON-DOPED GAAS BASE LAYER OF GAINP GAAS HETEROJUNCTIONBIPOLAR-TRANSISTORS/

Authors
RICHTER E KURPAS P SATO M TRAPP M ZEIMER U HAHLE S WEYERS M
Citation
E. Richter et al., HYDROGEN IN CARBON-DOPED GAAS BASE LAYER OF GAINP GAAS HETEROJUNCTIONBIPOLAR-TRANSISTORS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 337-340
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
44
Issue
1-3
Year of publication
1997
Pages
337 - 340
Database
ISI
SICI code
0921-5107(1997)44:1-3<337:HICGBL>2.0.ZU;2-7
Abstract
Hydrogen incorporation into heavily carbon-doped GaAs grown by metal-o rganic vapour phase epitaxy using carbon tetrabromide (CBr4) has been studied. In the base layer of as-grown GaInP/GaAs heterojunction bipol ar transistors (HBTs), about 20% of the carbon accepters are found to be passivated by hydrogen. The outdiffusion of this hydrogen during an ex situ annealing at 450 degrees C in nitrogen, which is effective fo r carbon-doped single layers, is blocked by n-type capping layers in H BTs. An in situ annealing step was found to be suitable to reduce the acceptor passivation in HBTs to about 10%. (C) 1997 Elsevier Science S .A.