INVESTIGATION OF THE GAAS SI HETEROJUNCTION BAND LINEUP WITH CAPACITANCE AND CURRENT VERSUS VOLTAGE MEASUREMENTS/

The GaAs/Si heterojunction band lineup has been investigated using cap acitance versus voltage (C-V) and current versus voltage (I-V) measure ments on n-GaAs/p-Si (n approximate to p approximate to 10(16) cm(-3)) heterojunction diodes. Such an approach was possible because of the f abrication Of diodes with near-ideal characteristics; ideality factors of less than 1.10 were deduced from forward bias I-V measurements. Th e heterojunction built-in voltage was determined by extrapolation from C-2-V plots, and band offsets of Delta E-c = 0.03 eV and Delta E-v = 0.27 eV were calculated at 300 K for the conduction and valence bands, respectively. The heterojunction energy band diagram was constructed, I-V measurements at various temperatures in the vicinity of 300 K wer e used to extract the potential barrier to electron transport across t he junction, and the results were consistent with those from C-V. The results also agree well with theoretical models. (C) 1997 Elsevier Sci ence S.A.