MICROPIPES AND POLYTYPISM AS A SOURCE OF LATERAL INHOMOGENEITIES IN SIC SUBSTRATES

Citation
Sg. Muller et al., MICROPIPES AND POLYTYPISM AS A SOURCE OF LATERAL INHOMOGENEITIES IN SIC SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 392-394
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
44
Issue
1-3
Year of publication
1997
Pages
392 - 394
Database
ISI
SICI code
0921-5107(1997)44:1-3<392:MAPAAS>2.0.ZU;2-Z
Abstract
Structural and electrical inhomogeneities in SIC bulk crystals grown b y the modified Lely sublimation method [1] in (0001) direction are inv estigated. Inclusions of different polytypes such as 15R in 6H materia l are observed on a macroscopic as well as a microscopic scale. Their size and number can be associated with the growth rate of the crystal. Beside the familiar micropipes, 'nanopipes' were observed by atomic f orce microscopy. Micropipes and nanopipes form centers of growth spira ls related to the growth mechanism of the crystals under study. These micro- and nanopipes are a major source of structural and electrical i nhomogeneities of SiC which are discussed in this paper. (C) 1997 Publ ished by Elsevier Science S.A.