Citation
Xt. Zhou et al., Thin beta-SiC nanorods and their field emission properties, CHEM P LETT, 318(1-3), 2000, pp. 58-62
Citations number
19
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CHEMICAL PHYSICS LETTERS
ISSN journal
00092614
→ ACNP
Volume
318
Issue
1-3
Year of publication
2000
Pages
58 - 62
Database
ISI
SICI code
0009-2614(20000218)318:1-3<58:TBNATF>2.0.ZU;2-L
Abstract
Beta-silicon carbide (beta-SiC) nanorods (diameter, ca. 5-20 nm; length, 1
mu m) have been grown on porous silicon substrates by chemical vapor deposi
tion with an iron catalyst. The turn-on field of the grown beta-SiC nanorod
s on a porous silicon substrate is 13-17 V/mu m. (C) 2000 Elsevier Science
B.V. All rights reserved.