Jc. Hierso et al., Platinum and palladium films obtained by low-temperature MOCVD for the formation of small particles on divided supports as catalytic materials, CHEM MATER, 12(2), 2000, pp. 390-399
CVD studies devoted to platinum and palladium deposition on planar substrat
es for microelectronics have clearly shown that it is possible to reach hig
h-quality deposits at temperatures above 200 degrees C. Attempts to prepare
pure metallic deposits at temperatures around 100 degrees C and even lower
are of general interest, since a number of temperature-sensitive supports
could be then exploited. An other attracting issue in the field of catalyst
s elaboration is presented here. Pt(hfa)(2), PtMe2(cod), Pd(Cp)(eta(3)-C3H5
), and Pd(eta(3)-C3H5)(hfa) have been selected to produce by MOCVD platinum
and palladium deposits on planar and on divided supports. The EI-mass spec
trometry of the precursor complexes as well as their thermal behavior are r
eported (TGA, DSC, vapor pressure equations), introduction of hydrogen in t
he carrier gas results in a dramatic decrease of the deposition temperature
(35-120 degrees C) of the complexes. XPS and electron microprobe analyses
have shown that PtMe2(cod), Pd(Cp)(eta(3)-C3H5), and Pd(eta(3)-C3H5)(hfa) a
re suitable precursors to produce pure thin films at these remarkably low t
emperatures. Pt(hfa)(2) gave poor results since the deposits are contaminat
ed with fluorine, oxygen, and principally carbon. Using the CVD method in a
fluidized bed under reduced pressure conditions allowed the deposition of
the metals on porous divided substrates. Highly dispersed metallic particle
s of palladium and platinum on silica can be prepared under very mild tempe
ratures (below 120 degrees C). TEM micrographies revealed a narrow size dis
persion of the nanoparticles (average size 1-3 nm). EDX analyses did not sh
ow any contamination of the deposits. A high supersaturation regime was ide
ntified to be a crucial parameter in the fluidized bed-MOCVD method, allowi
ng a good nucleation rate with regard to the growth rate. Catalysts prepare
d by this method, and containing palladium and platinum on porous silica, w
ere highly active for the dehydrogenation of cyclohexane.