High magnetoresistance in sputtered permalloy thin films through growth onseed layers of (Ni0.81Fe0.19)(1-x)Cr-x

Citation
Wy. Lee et al., High magnetoresistance in sputtered permalloy thin films through growth onseed layers of (Ni0.81Fe0.19)(1-x)Cr-x, IEEE MAGNET, 36(1), 2000, pp. 381-385
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
36
Issue
1
Year of publication
2000
Part
2
Pages
381 - 385
Database
ISI
SICI code
0018-9464(200001)36:1<381:HMISPT>2.0.ZU;2-B
Abstract
The use of a thin (Ni0.81Fe0.19)(1-x)Cr-x seed layer for obtaining high ani sotropic magnetoresistance in Permalloy (Ni0.81Fe0.19) films is reported. T he process yields a high Delta R/R of, for example, 3.2% for 120-Angstrom-t hick NiFe, without high-temperature deposition or annealing, X-ray diffract ion shows that the NiFeCr seed layer causes the formation of large (111) te xtured grains in the Permalloy film, and that the interface between these t wo layers is quite smooth, These both increase the Delta R and reduce the r esistance R in the film, which lead to the high Delta R/R, Also discussed i s the enhanced Delta R/R and thermal stability trilayer magnetoresistive se nsors using this NiFeCr instead of Ta as a spacer.