Deposition of cobalt sulphide thin films by successive ionic layer adsorption and reaction (SILAR) method and their characterization

Authors
Sartale, SD Lokhande, CD
Citation
Sd. Sartale et Cd. Lokhande, Deposition of cobalt sulphide thin films by successive ionic layer adsorption and reaction (SILAR) method and their characterization, I J PA PHYS, 38(1), 2000, pp. 48-52
Citations number
14
Categorie Soggetti
Physics
Journal title
INDIAN JOURNAL OF PURE & APPLIED PHYSICS
ISSN journal
00195596 → ACNP
Volume
38
Issue
1
Year of publication
2000
Pages
48 - 52
Database
ISI
SICI code
0019-5596(200001)38:1<48:DOCSTF>2.0.ZU;2-P
Abstract
Successive ionic layer adsorption and reaction (SILAR) method was used to d eposit cobalt sulphide (CoS) thin films on amorphous glass and Si (111) wat er substrates in aqueous medium using cobalt sulphate (CoSO4) solution as t he cationic precursor and sodium sulphide (Na2S) solution as the anionic pr ecursor. The conditions Tor the formation or good quantity films such as co ncentration. pH, and temperature of anionic and cationic precursor solution s, immersion and rinsing times and number of immersions were optimised. The structural, optimal and electrical properties of the films are reported.