T. Tsukuda et H. Ikoma, Low-temperature growth of Si oxide with good electrical qualities using helicon-wave-excited O-2-Ar plasma and forming gas annealing, JPN J A P 1, 39(1), 2000, pp. 8-13
P-type Si(100) substrate was oxidized using helicon-wave-excited O-2-Ar pla
sma at low temperatures. Post-thermal annealings were performed after oxida
tion in forming gases (FGs) containing 3% and 5% H-2. The capacitance-volta
ge (C-V) characteristics were significantly improved by post-thermal anneal
ing at 500 degrees C in FG containing 3% H-2, and a minimum interface stare
density of 1.5 x 10(10) eV(-1)cm(-2) was obtained, which was comparable to
those at device-grade thermal-Si-oxide/Si interfaces. The interface-state
densities was about similar to 10(11) eV(-1)cm(-2) for the oxide samples po
st-thermally annealed in O-2 ambient. The Fowler-Nordheim (FN) tunneling cu
rrent is the dominant leakage current mechanism similar to that of thermal
Si oxide. However, the barrier height was somewhat smaller than that of the
thermal oxide. FN current stress experiments were carried out to simulate
the hot-carrier injection endurance of the grown oxide film with both elect
rical polarities of the stress voltages. The shift of the threshold voltage
was the smallest for the oxide sample post-thermally annealed in FG contai
ning 3% H-2. The results of the FN stressing could be well interpreted by t
he surface plasmon and avalanche breakdown models.