H. Matsuura et K. Segawa, Investigation of transient reverse currents in X-ray detector pin diodes by discharge current transient spectroscopy, JPN J A P 1, 39(1), 2000, pp. 178-179
Transient reverse currents flow in X-ray detector diodes when a high revers
e bias (operating voltage) is suddenly applied from 0 V, which leads to pro
blems in the X-ray measurements. Discharge current transient spectroscopy (
DCTS) was applied to determine the densities, energy levels and capture cro
ss sections of traps related to the transient reverse currents in the diode
s. DCTS analysis revealed one type of trap with E-C-0.54 eV in our silicon
pin diodes, where E-C is the energy level at the bottom of the conduction b
and.