Investigation of transient reverse currents in X-ray detector pin diodes by discharge current transient spectroscopy

Citation
H. Matsuura et K. Segawa, Investigation of transient reverse currents in X-ray detector pin diodes by discharge current transient spectroscopy, JPN J A P 1, 39(1), 2000, pp. 178-179
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
1
Year of publication
2000
Pages
178 - 179
Database
ISI
SICI code
Abstract
Transient reverse currents flow in X-ray detector diodes when a high revers e bias (operating voltage) is suddenly applied from 0 V, which leads to pro blems in the X-ray measurements. Discharge current transient spectroscopy ( DCTS) was applied to determine the densities, energy levels and capture cro ss sections of traps related to the transient reverse currents in the diode s. DCTS analysis revealed one type of trap with E-C-0.54 eV in our silicon pin diodes, where E-C is the energy level at the bottom of the conduction b and.