Y. Kataoka et al., Dry etching characteristics of Si-based materials using CF4/O-2 atmospheric-pressure glow discharge plasma, JPN J A P 1, 39(1), 2000, pp. 294-298
We etched materials used for semiconductor manufacturing processes, such as
poly-Si films, SiN films, SiO2 films and photoresists, using atmospheric-p
ressure glow discharge plasmas, where CF4 gas was added to the O-2 gas in t
he discharge and downflow regions. High etching rates of 2.3 mu m/min for t
he poly-Si and SiN films, 1.0 mu m/min for the SiO2 films and 7.0 mu m/min
for photoresist were obtained in the discharge region. Furthermore, a reaso
nably high etching rate of 0.82 mu m/min for poly-Si films was also confirm
ed in the downflow region. The etching characteristics obtained under atmos
pheric-pressure glow discharge plasmas and low-pressure glow discharge plas
mas in the discharge region were very similar. However, in the downflow reg
ion, the etching rates of SiN and SiO2 films were substantially reduced com
pared to those in the discharge legion. These etching mechanisms were also
modeled based on analytical data and the results of the etching evaluation.