We propose a modified droplet epitaxy method for fabricating self-organized
GaAS/AlGaAs quantum dots (QDs) with a high As flux irradiation and a low s
ubstrate temperature. By our novel method, GaAs QDs were successfully forme
d, retaining their pyramidal shape; original base size and density of dropl
ets, and preventing layer-by-layer growth. Quantum size effects of the QDs
were distinctly observed by photoluminescence measurements. It was confirme
d that this new modified droplet epitaxy method is promising for fabricatin
g a high-quality GaAs/AlGaAs QD system.