Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing

Two photoluminescence (PL) bands were observed in 4 x 10(15) cm(-2)-fluence -Si+-implanted 100-nm-thick SiO2 films after rapid thermal annealing (RTA) at 950-1150 degrees C with 2-4 eV excitation. The PL band at 2.2 eV was exc ited by 3.8 eV photons in the films after RTA in dry nitrogen while the oth er band at 1.9 eV was excited by 2.5 eV photons in the films after isochron al RTA in wet nitrogen. Moreover, the origin for the 2.2eV energy band was found to be the same as that of the E-delta' center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.