Diamond film gas sensors for leak detection of semiconductor doping gases

Gas sensors for leak detection of toxic semiconductor doping Eases such as PH3, B2H6, and AsH3 were fabricated using diamond films. The sensors have a double-layered structure composed of undoped and B-doped polycrystalline d iamond layers with Pt electrodes. The relative changes in the resistance of the sensors were typically 10-20% for 0.2 ppm PH3 in air, and the highest value was over 100%. It was concluded that the diamond film gas sensors fab ricated in the present work would he practically applicable as compact soli d-slate sensors with an advantage over the conventional aqueous electrolyte sensors.