E. Koukharenko et al., Thermoelectric properties of Bi2Te3 material obtained by the ultrarapid quenching process route, J ALLOY COM, 299(1-2), 2000, pp. 254-257
Bismuth telluride materials were fabricated by ultrarapid quenching. Foils
are obtained with a thickness varying from 10 to 60 mu m The thermoelectric
properties were determined measuring electrical resistivity, Seebeck coeff
icient and Hall coefficient. The influence of quenching temperature and hea
t treatment on the Seebeck coefficient was studied. The variation of thermo
electric properties with temperature was also studied. N-type degenerated m
aterials were obtained with a carrier concentration of 10(29) m(-3). (C) 20
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