Threshold effect for photorefractive light-induced scattering and signal beam amplification in doped LiNbO3 crystals

Citation
Ny. Kamber et al., Threshold effect for photorefractive light-induced scattering and signal beam amplification in doped LiNbO3 crystals, J APPL PHYS, 87(6), 2000, pp. 2684-2690
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
6
Year of publication
2000
Pages
2684 - 2690
Database
ISI
SICI code
0021-8979(20000315)87:6<2684:TEFPLS>2.0.ZU;2-O
Abstract
In this article, we have studied experimentally the threshold effect of inc ident light intensity for the photorefractive light-induced scattering and signal beam amplification in doped LiNbO3 crystals. Our results show that t he signal beam can be most effectively amplified for a specific pump light intensity when the threshold effect of incident light intensity for photore fractive light-induced scattering is taken into account in doped LiNbO3 cry stals. Doping the LiNbO3 crystal with suitable concentration of Fe and dama ge-resistant dopants will provide an effective way to control the photorefr active properties of LiNbO3 crystal. We demonstrated the advantage of the f anning-noise-free double-doped photorefractive LiNbO3 crystals for three-di mensional storage. This method to suppress the fanning noise is very simple and convenient to practice. (C) 2000 American Institute of Physics. [S0021 -8979(00)01506-1].