Calculation of the contribution to grain boundary diffusion in ionic systems that arises from enhanced defect concentrations adjacent to the boundary

Citation
Yc. Chung et al., Calculation of the contribution to grain boundary diffusion in ionic systems that arises from enhanced defect concentrations adjacent to the boundary, J APPL PHYS, 87(6), 2000, pp. 2747-2752
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
6
Year of publication
2000
Pages
2747 - 2752
Database
ISI
SICI code
0021-8979(20000315)87:6<2747:COTCTG>2.0.ZU;2-Z
Abstract
The enhancement of the concentration of a defect in the space-charge region near a grain boundary in an intrinsic ionic system was used to specify the change in the corresponding diffusion coefficient as a function of distanc e, x, normal to the boundary. This zone of enhanced and continuously varyin g diffusivity serves as a vehicle for enhanced transport along the boundary in addition to the expected contribution arising from the different struct ure at the boundary core. A two-dimensional diffusion equation was establis hed for concentration c(x,y,t) in the space-charged region, solved numerica lly using the Crank-Nicolson finite-difference method, and integrated norma l to the boundary to provide the average concentration gradient (c) over ba r(y,t) along the boundary-the solute distribution usually measured by exper iment. The present gradients were analyzed in the same fashion as experimen tal data using a recent solution to the conventional model for the grain-bo undary diffusion problem in which the interface is treated as a thin slab o f half-width a and enhanced diffusivity D-' imbedded in a material with bul k diffusivity D. The analyses provided effective values for the conventiona l diffusion parameter beta = [(D'/D) - 1]left perpendiculara/Dtright perpen dicular that describe the influence of space charge on enhanced diffusion a long the boundary. The calculations were repeated for a number of values of the parameter Z(i)e phi(infinity)/kT, where Z(i)e is the effective charge of the defect and phi(infinity) is bulk electric potential far from the bou ndary. In the finite-difference calculations the value of the "annealing ti me," t, that appears in beta was set equal to the product of the square of the Debye length, delta(2), divided by the bulk diffusion coefficient, D. G iven a value of phi(infinity), the present results thus permit an estimatio n of the effect of space charge on preferential diffusion along a grain bou ndary in a material in terms of beta. If the Debye length is known for the material or can be measured, the value of beta can readily be converted to an effective value of the conventional grain boundary diffusion product aD' /D. (C) 2000 American Institute of Physics. [S0021-8979(00)07806-3].