High-spatial-resolution quantum-well intermixing process in GaInAs/GaInAsPlaser structure using pulsed-photoabsorption-induced disordering

Raman spectroscopy was used to study the spatial resolution of pulsed-photo absorption-induced quantum-well intermixing in a GaInAs/GaInAsP laser struc ture. A differential band gap shift of up to 60 meV has been obtained from a sample masked with SixNy/Au and exposed to the laser irradiation. Intermi xing was detected in the irradiated regions through the shift of GaAs-like modes to lower frequencies. In addition, the intermixing induced GaInP long itudinal optical modes in the irradiated regions, which is evidence of the intermixing between the upper GaInAs cap and the GaInAsP layer. The spatial resolution of this process, which was obtained from micro-Raman spectra wh en scanned across the interface of the intermixing mask, was found to be be tter than 2.5 mu m. (C) 2000 American Institute of Physics. [S0021-8979(00) 04106-2].