Empirical low-field mobility model for III-V compounds applicable in device simulation codes

A Caughey-Thomas-like mobility model with temperature and composition depen dent coefficients is used in this work to describe the dependence of electr on and hole mobilities on temperature, doping concentration, and alloy comp osition. Appropriate parameter sets are given for a large number of III-V b inary and ternary compounds, including: GaAs, InP, InAs, AlAs, GaP, Al0.3Ga 0.7As, In0.52Al0.48As, In0.53Ga0.47As, and In0.49Ga0.51P. Additionally, phy sically justifiable interpolation schemes are suggested to find the mobilit ies of various ternary and quaternary compounds (such as AlxGa1-xAs, In1-xG axP, In1-xGaxAs, In1-xAlxAs, and In1-xGaxAsyP1-y) in the entire range of co mposition. The models are compared with numerous measured Hall data in the literature and very good agreement is observed. The limitations of the pres ent model are also discussed. The results of this work should be extremely useful in device simulation packages, which are currently lacking a reliabl e mobility model for the above materials. (C) 2000 American Institute of Ph ysics. [S0021-8979(00)03606-9].