Growth of InSb on GaAs using InAlSb buffer layers

We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of similar to 0.55 mu m thick Insb layers with InAlSb buffers on GaAs substrates with measured electron mobilities of sim ilar to 40000 cm(2)/V s. We have investigated the In1-xAlxSb buffers for co mpositions x less than or equal to 0.22 and have found that the best result s are obtained near x = 0.12 due to the tradeoff of buffer layer band gap a nd lattice mismatch. (C) 2000 Elsevier Science B.V. All rights reserved.