Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (001)InP

The deposition of lattice mismatched InAs on (0 0 1)InP by gas source molec ular beam epitaxy leads to the formation of quantum sires in contrast to th e familiar dot formation in the InAs/GaAs system. The paper describes two p rocesses: (i) the formation of a two-dimensional, alloyed layer InAsyP1-y i n a pre-deposition phase and (ii) the strain relaxation process into wire-l ike structures, when depositing InAs on top. The quantum wires have been in vestigated using atomic force microscopy, transmission electron microscopy, and transport anisotropy measurements. (C) 2000 Elsevier Science B.V. All rights reserved.