Z. Pan et al., Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAsby molecular beam epitaxy, J CRYST GR, 209(4), 2000, pp. 648-652
A series of superlattices delta-GaNxAs1-x/GaAs were grown by a DC plasma-N-
2-assisted molecular beam epitaxy. The evolution of the surface reconstruct
ion during the growth has been studied with the use of in situ reflection h
igh-energy electron diffraction. The superlattices have been characterized
by high-resolution X-ray diffraction measurements. Distinct satellite peaks
indicate that the superlattices are of good quality. The N compositions in
strained GaNxAs1-x monolayers are obtained from the dynamical simulations
of the measured X-ray diffraction patterns. The periodicity fluctuations of
N composition are obtained from a kinematical method dependent on the broa
dening of the satellite peaks of the X-ray diffraction. (C) 2000 Elsevier S
cience B.V. All rights reserved.