Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAsby molecular beam epitaxy

Citation
Z. Pan et al., Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAsby molecular beam epitaxy, J CRYST GR, 209(4), 2000, pp. 648-652
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
209
Issue
4
Year of publication
2000
Pages
648 - 652
Database
ISI
SICI code
0022-0248(200002)209:4<648:GACOSS>2.0.ZU;2-U
Abstract
A series of superlattices delta-GaNxAs1-x/GaAs were grown by a DC plasma-N- 2-assisted molecular beam epitaxy. The evolution of the surface reconstruct ion during the growth has been studied with the use of in situ reflection h igh-energy electron diffraction. The superlattices have been characterized by high-resolution X-ray diffraction measurements. Distinct satellite peaks indicate that the superlattices are of good quality. The N compositions in strained GaNxAs1-x monolayers are obtained from the dynamical simulations of the measured X-ray diffraction patterns. The periodicity fluctuations of N composition are obtained from a kinematical method dependent on the broa dening of the satellite peaks of the X-ray diffraction. (C) 2000 Elsevier S cience B.V. All rights reserved.