Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (113)B InP substrates

InAs islands have been grown by gas source molecular beam epitaxy on (1 1 3 )B InP substrates and examined by atomic force microscopy and photoluminesc ence. Two types of island size and spatial distribution have been identifie d. For deposits lower than 2.4 monolayers, an almost linear increase of den sity of islands presenting a nearly constant size is observed. For higher I nAs coverages which correspond to the formation of extremely dense island a rrays, a saturation of density occurs and island size decreases. It is sugg ested that the constant size at low coverage is related to self-limiting is land growth and that the island density saturation at higher coverage is ma inly due to long range interactions through the substrate. (C) 2000 Elsevie r Science B.V. All rights reserved.