Nitrogen doping of MOVPE-grown ZnSe by hydrazine derivatives

Dimethylhydrazine and tertiarybutylhydrazine were used as nitrogen sources in the metalorganic vapour-phase epitaxy of ZnSe:N/GaAs epilayers grown at typically 345 degrees C. Both compounds release reactive NH2 species in the rmal decomposition well below growth temperature and induce efficient nitro gen incorporation. The achievement of high net acceptor concentrations is p resently limited by residual donor impurities in the employed source materi als. (C) 2000 Elsevier Science B.V. All rights reserved.