MBE growth of wide band gap Pb1-xSrxSe on Si(111) substrate

Epitaxial wide band gap Pb1-xSrxSe (x > 0.9) layers have been successfully grown by molecular beam epitaxy on Si(1 1 1) and BaF2(1 1 1) substrates. Re flection high-energy electron diffraction (RHEED) showed that layers on bot h substrates were single crystal and oriented to the substrate. X-ray diffr action showed that layers on Si(1 1 1) were high quality as indicated by fu ll-width at half-maximum (FWHM) values of less than 300 arcsec. These resul ts provide a foundation for the eventual fabrications of ultraviolet detect or arrays and high power-integrated circuits on silicon substrates. (C) 200 0 Elsevier Science B.V. All rights reserved.