Rapid enlargement of SiC single crystal using a cone-shaped platform

We investigated the enlargement of SiC single crystal during physical vapor transport growth by modifying the shape of graphite lid. The single crysta ls grown on the cone-shaped platform were larger in diameter than those gro wn on the conventional one. The enlargement of ingot is discussed in terms of the dual role of polycrystals during crystal growth: (i) it provides a p latform for single crystal and (ii) an obstacle to the lateral growth of in got. The dependence of the broadening angle (beta) of single crystal on the taper angle (theta) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition found. (C) 2000 Elsevier Scien ce B.V. All rights reserved.