Growth temperature dependence of substitutional carbon incorporation in Si1-yCy alloys and Si1-yCy/Si multiple quantum wells

The carbon incorporation into lattice sites in Si1-yCy epilayers and Si1-yC y/Si multiple quantum wells grown by molecular beam epitaxy was investigate d as a function of growth temperature in the range of 350-650 degrees C usi ng Raman spectroscopy, double crystal X-ray diffraction (DCXD), and atomic force microscopy (AFM). The substitutional carbon concentration deduced fro m the simulation of DCXD results decreases with increasing growth temperatu re due to the strain relaxation process which occurred by the change of the growth mode from two-dimensional to three-dimensional island growth. (C) 2 000 Elsevier Science B.V. All rights reserved.