Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy

Citation
Y. Chen et al., Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy, J CRYST GR, 209(4), 2000, pp. 994-998
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
209
Issue
4
Year of publication
2000
Pages
994 - 998
Database
ISI
SICI code
0022-0248(200002)209:4<994:SOQWII>2.0.ZU;2-1
Abstract
Self-ordering of quasi-quantum wires in multilayer InAlAs/AlGaAs nanostruct ures grown by molecular beam epitaxy is identified. The chain-like structur es along the [1 (1) over bar 0] Of direction formed by coalescence of quant um dots were observed. The photoluminescence of the nanostructures is parti ally polarized along the [1 (1) over bar 0] direction. The polarization rat io depends on the wavelength and the maximum polarization is on the lower e nergy side. The maximum polarization increases from 0.32 at 10 K to 0.53 at 100 K, and the energy position of maximum polarization moves near to PL pe ak with increasing temperature. They are all related to the existence of is olated islands and quasi-quantum wires in our sample. This result provides a novel approach to produce narrow quantum wires. (C) 2000 Elsevier Science B.V. All rights reserved.