Citation
Hx. Zhang et al., An investigation on the epitaxial growth of GaN film on Si(111) substrate, J MAT SCI L, 19(6), 2000, pp. 529-531
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE LETTERS
ISSN journal
02618028
→ ACNP
Volume
19
Issue
6
Year of publication
2000
Pages
529 - 531
Database
ISI
SICI code
0261-8028(200003)19:6<529:AIOTEG>2.0.ZU;2-M