The electronic structure and bonding of hydrogen near a fcc Fe stacking fault

Citation
L. Moro et al., The electronic structure and bonding of hydrogen near a fcc Fe stacking fault, J PHYS D, 33(3), 2000, pp. 292-298
Citations number
49
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
33
Issue
3
Year of publication
2000
Pages
292 - 298
Database
ISI
SICI code
0022-3727(20000207)33:3<292:TESABO>2.0.ZU;2-0
Abstract
The atom superposition and electron delocalization molecular orbital (ASED- MO) semiempirical method is used to analyse the atomic hydrogen-Fe interact ion. The face centred cubic (fcc) Fe model contains a stacking fault and as a comparison the H-fcc Fe (normal) system is also studied. The solid is re presented by a cluster of 180 metallic atoms distributed in five layers. Th e interstitial atoms localized in different geometric positions found an en ergetic minimum in a zone close to octahedral interstitial holes in the sta cking fault. The electronic structure shows that the H-Fe bond involves mai nly the Fe 4s and 4p orbitals and the is H orbital. The Fe-Fe bond near H i s destabilized, to approximately 27% of its original value.