Mj. Legodi et al., Electronic and transformation properties of a metastable defect introducedin epitaxially grown sulfur doped n-GaAs by particle irradiation, MAT SCI E B, 71, 2000, pp. 96-99
We report on the electronic and metastable properties of a new defect, E al
pha IR10 positioned 0.262 eV below the conduction band, and introduced afte
r particle irradiation of sulfur doped epitaxial n-GaAs. Using deep level t
ransient spectroscopy (DLTS), we detected E alpha IR10 after 5.4 MeV He-ion
, 10 and 12 MeV electron, and 1 MeV proton irradiations. However, we could
not detect E alpha IR10 after irradiation by electrons with energy 0.2-2.4
MeV. DLTS measurements coupled with bias-on/bias-off cooling cycles were us
ed to study the removal and introduction kinetics of E alpha IR10. After re
moving E alpha IR10 (Delta E-removal = 0.76 +/- 0.08 eV) by zero bias annea
ling at room temperature, it can be re-introduced by reverse bias annealing
(Delta E-introduction = 0.58 +/- 0.08 eV), in the 230-260 K temperature re
gion under predominantly first order kinetics. Annealing studies revealed t
hat E alpha IR10 completely anneals out at 420 K. (C) 2000 Elsevier Science
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