Cluster formation and growth in Si ion implanted c-Si

Formation condition and annealing kinetics of self-interstitial (I) cluster s in. ion implanted Si have been investigated. Deep level transient spectro scopy (DLTS) and photoluminescence (PL) measurements were performed on both p-type Czochralski Si samples implanted with Si ions at energies ranging f rom 40 KeV to 1.2 MeV. They reveal that I-clusters form for implantation fl uences above 10(12) cm(-2) and annealing temperatures higher than 550 degre es C. Analysis of the annealing kinetics at temperatures in the range 550-7 00 degrees C reveals that I-clusters dissociate with an energy depending on the implantation dose. The characteristic dissociation energy is similar t o 2.3 eV for 1 x 10(12) cm(-2) implants, and this value increased towards t he typical {311} extended defects dissociation energy value (similar to 3.8 eV) by increasing the implantation fluence. Finally, the transition from I -clusters to (311) defects was followed using PL and DLTS in combination wi th transmission electron microscopy analysis. A PL line at 1375 nm has been associated to (311) extended defects and a threshold dose and annealing te mperature for the extended defects formation identified. (C) 2000 Elsevier Science S.A. All rights reserved.