Effect of nitrogen ion impingement during molecular beam epitaxy growth ofGaAs as a function of acceleration energy

Authors
Fukuzawa, Y Shima, T Sanpei, H Makita, Y Kimura, S Nakamura, Y
Citation
Y. Fukuzawa et al., Effect of nitrogen ion impingement during molecular beam epitaxy growth ofGaAs as a function of acceleration energy, MAT SCI E B, 71, 2000, pp. 192-195
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
71
Year of publication
2000
Pages
192 - 195
Database
ISI
SICI code
0921-5107(20000214)71:<192:EONIID>2.0.ZU;2-4
Abstract
Nitrogen ions were impinged during the molecular beam epitaxial growth of G aAs at 550 degrees C varying its acceleration energy in the range from 100 eV to 10 keV. No photoluminescence (PL) emissions were observed in as-grown condition when ion acceleration energy becomes higher than 500 eV. After h igh-temperature annealing at 750 degrees C, structural defects were removed and incorporated nitrogen atoms became optically active. PL emissions that relate to isoelectronic impurity and dilute GaAsN alloys were observed wit h an ion acceleration energy of 10 keV. (C) 2000 Elsevier Science S.A. All rights reserved.