Gettering of platinum by cavities induced in silicon by high energy implantation of HE ions

Authors
Mariani-Regula, G Pichaud, B Godey, S Ntsoenzok, E Perner, O El Bouayadi, R
Citation
G. Mariani-regula et al., Gettering of platinum by cavities induced in silicon by high energy implantation of HE ions, MAT SCI E B, 71, 2000, pp. 203-206
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
71
Year of publication
2000
Pages
203 - 206
Database
ISI
SICI code
0921-5107(20000214)71:<203:GOPBCI>2.0.ZU;2-0
Abstract
Pt diffused diodes (p(+) n n(+) junctions) were manufactured on 75 mu m n-t ype epitaxial Si wafers. Gettering of Pt by 3.1 MeV He-implantation induced defects was performed. The fleunce was 10(17) He/cm(2). A post thermal ann ealing at 1050 degrees C for 2 h gave rise to formation of a 0.2 mu m cavit y layer at the predicted projected range (R-p) as measured by XTEM (cross s ectional transmission electron microscopy). SIMS (secondary ion mass spectr oscopy) crater profiles of both B and Pt revealed that the cavities are eff icient sites to trap Pt atoms. (C) 2000 Elsevier Science S.A. All rights re served.