Defect-related growth processes at an amorphous/crystalline interface: a molecular dynamics study

The structure of the interface between amorphous Si and {100}Si and its cha nge during thermal annealing at 1000 K is investigated using classical mole cular dynamics simulations. The defect structure of the interface can be re duced to two complex defect structures which contain dimers. The two defect structures are proved to be only two interface modifications of a topologi cal defect of crystalline silicon called bond defect. The annealing of the bond defect at the interface contributes to crystallization where an uncomp leted [110] ledge of a {111} terrace is completed and simultaneously a ledg e perpendicular to this ledge is opened. This process is discussed within t he kink-model of crystallization. (C) 2000 Elsevier Science S.A. All rights reserved.