Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes

B and Si ion implantation for edge termination of Au Schottky diodes have b een studied to enhance the breakdown voltages of the diodes. B ions of 30 k eV were implanted with three doses of 1 x 10(13), 1 x 10(14), and 1 x 10(15 ) B cm(-2) to achieve edge-terminated Schottky diodes. For Si implantation, the energy of 70 keV was used with the same doses. Au Schottky diode impla nted with a dose of 1 x 10(13) B cm(-2) shows the best results of the edge termination: a reverse leakage of about 1.5 x 10(-3) A cm(-2) at the breakd own voltage, 386 V. Unimplanted Schottky diode shows only 216 V at the brea kdown event. Si implantation and high dose B implantation result in early b reakdown and high current leakage compared to the low dose B implantation. It is concluded that the early breakdown and the high leakage are closely r elated to the density of ion-beam-induced defects near the end-of-range (EO R) region. (C) 2000 Elsevier Science S.A. All rights reserved.