Comparison of electronic structure and properties of hydrogen-associated and thermal double donors in silicon

Authors
Tokmoldin, SZ Mukashev, BN Abdullin, KA Gorelkinskii, YV Pajot, B
Citation
Sz. Tokmoldin et al., Comparison of electronic structure and properties of hydrogen-associated and thermal double donors in silicon, MAT SCI E B, 71, 2000, pp. 263-267
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
71
Year of publication
2000
Pages
263 - 267
Database
ISI
SICI code
0921-5107(20000214)71:<263:COESAP>2.0.ZU;2-1
Abstract
Infrared (IR) and electron paramagnetic resonance (EPR) studies of quenchin g-dependent hydrogen-related double donor (HDD) formed in proton-implanted n-Si and p-Si upon annealing above 300 degrees C were carried out. IR data taken at liquid He and N-2 reveal that quenching-dependent IR absorption li nes is due to HDD electronic excitations. An analysis of Si-H local vibrati onal modes and EPR data on AA1 EPR center allow to conclude that HDD is an interstitial-type complex with C-2v-symmetry. There are similarities in str uctures and properties of HDD and thermal double donors (TDD). However, uni axial stress-induced alignment and recovery kinetics of HDD (AA1 EPR center ) show strong difference in comparison with TDD (NL8 EPR center). (C) 2000 Elsevier Science S.A. All rights reserved.