Dislocation-gold interactions in FZ p-Si were studied both by Deep Level Tr
ansient Spectroscopy (DLTS) and Electron Beam Induced Current (EBIC). It is
shown that they are rather complex processes including direct and indirect
interactions. The first one consists in gettering of gold with a formation
of precipitates at dislocations inducing a depletion region around them. T
he second one consists in gold redistribution determined by an enhancement
of self-interstitial annihilation, which in turn stimulates the kick-out re
action in regions adjacent to dislocations. The final gold distribution is
a result of the competition between these two processes and is shown to dep
end on annealing and cooling conditions. (C) 2000 Elsevier Science S.A. All
rights reserved.