Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1-xCdxTePLD films

Authors
Gorbach, TY Holiney, RY Matveeva, LA Svechnikov, SV Venger, EF Kuzma, M Wisz, G
Citation
Ty. Gorbach et al., Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1-xCdxTePLD films, MAT SCI E B, 71, 2000, pp. 288-291
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
71
Year of publication
2000
Pages
288 - 291
Database
ISI
SICI code
0921-5107(20000214)71:<288:EOTSWP>2.0.ZU;2-P
Abstract
Silicon patterned substrates and Hg1-xCdxTe films prepared by pulse laser d eposition (PLD) on these substrates were examined by scanning electron micr oscopy (SEM), electronography (EG) and low-field electroreflectane (ER) spe ctroscopy in dependence on a pretreatment of Si wafers and the microrelief type. Change in morphologies of the substrates and films is discussed. The crystallinity data and analysis of ER spectra parameters are presented. (C) 2000 Elsevier Science S.A. All rights reserved.