Cu-similar to-p-CdTe contacts formed by deposition of Cu film on a mechanic
ally polished (001) surface of p-CdTe single crystal exhibit rectification
property, contrary to ohmic property of Cu-p-CdTe contacts on the chemicall
y polished surface of p-CdTe. The height barrier is estimated assuming that
it is caused by the distortion band structure at the CdTe surface. The dis
tortion is created by mechanical treatment and is a result of a local tensi
ons which exceeds macroscopic limit of the CdTe elasticity (4 x 10(9) Pa).
A model of the effect is proposed. The calculated magnitude height barrier
1.9 eV agrees well with experimental data. (C) 2000 Elsevier Science S.A. A
ll rights reserved.