Electron microscopy of life-tested semiconductor laser diodes

Electron Microscopy on life-tested 980 nm SL SQW InGaAs/AlGaAs laser diodes is able to find and analyze lattice defects responsible for the detected f ailures. Anyway, the origin and evolution of those defects remains question able. Only the comparative analysis of life-test measurements, EBIC-FIB/TEM images, and charge-transport physics is able to point out a coherent frame work for complete decoding of the failure kinetics. Minority-carrier diffus ion and their enhanced recombination at defective lattice points are indica ted, as the energy supply required for defect reaction and growth. The rule s of charge diffusion drive both the reaction model, the interpretation of EBIC images and the expected electrical and optical effects. Strain release at the ultimate propagation of defects into the strained InGaAs quantum la yer is then easily related to the final state of the failed devices. (C) 20 00 Elsevier Science Ltd. AU rights reserved.