Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology

Authors
Gerardi, C Melanotte, M Crivelli, B Zonca, R Alessandri, M
Citation
C. Gerardi et al., Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology, MICRON, 31(3), 2000, pp. 291-297
Citations number
19
Categorie Soggetti
Multidisciplinary
Journal title
MICRON
ISSN journal
09684328 → ACNP
Volume
31
Issue
3
Year of publication
2000
Pages
291 - 297
Database
ISI
SICI code
0968-4328(200006)31:3<291:NOGATO>2.0.ZU;2-7
Abstract
Nitridation treatments are very important in CMOS technology because of the ir capability of improving the gate and tunnel oxide reliability. In this w ork we report on N2O and NO annealing of pre-oxidised samples showing physi cal and electrical characteristics of the thin oxides. The difference betwe en the physical behaviours of N2O and NO oxides is evidenced and related to their different electrical properties. (C) 2000 Elsevier Science Ltd. All rights reserved.