The excimer laser irradiation of thin film amorphous silicon (a-Si) precurs
ors on glass is a suitable method for obtaining high-performance polycrysta
lline silicon (p-Si) active layers for devices and circuits. By changing th
e experimental conditions, the recrystallization method generates a variety
of microstructures that have direct impact on the material performance.
An additional reason for microstructural characterization is introduced by
the methods for spatially locating the recrystallization nuclei, used in mo
re ergonomic concepts of device fabrication.
Metal and SiO2 strip overlayers have been applied here, on a-Si to fix the
position of the solidification seeds after laser melting.
The control of many aspects of the thin film microstructure can be achieved
with a collection of a few inspection techniques like AFM, SEM, EC contras
t, TEM, X-ray diffraction (XRD), some of which require preliminary grain de
coration treatment, and some do not.
The results of different irradiation experiments, are herein illustrated, e
nlightened by the above characterization techniques, for providing informat
ion on surface morphology, grain arrangement, preferred orientation. 2000 E
lsevier Science Ltd. All rights reserved.