Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case

Authors
Sanguinetti, S Chiantoni, G Miotto, A Grilli, E Guzzi, M Henini, M Polimeni, A Patane, A Eaves, L Main, PC
Citation
S. Sanguinetti et al., Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case, MICRON, 31(3), 2000, pp. 309-313
Citations number
17
Categorie Soggetti
Multidisciplinary
Journal title
MICRON
ISSN journal
09684328 → ACNP
Volume
31
Issue
3
Year of publication
2000
Pages
309 - 313
Database
ISI
SICI code
0968-4328(200006)31:3<309:SOIQDO>2.0.ZU;2-N
Abstract
We have investigated the In(Ga)As island formation, in the Stranski-Krastan ov growth mode, on (311)A GaAs substrates. The surface topography of InAs a nd InGaAs strained epilayers was studied by contact microscopies. The diffe rent substrate affects the overgrown island shape. In(Ga)As grown on (311)A gives rise to quantum wire-like islands, Quantum dots (QDs), but with high ly anisotropic shapes, are the outcomes of InAs deposition. QD samples were also characterized by photoluminescence (PL) measurements. Correlation bet ween optical and morphological properties was observed. (C) 2000 Elsevier S cience Ltd. All rights reserved.