We have succeeded in fabricating smooth and flat epitaxial (Hg,Re)Ba2CaCu2O
y, thin films containing no appreciable pinholes and outgrowths. The films,
with a thickness of approximately 75 nm, were prepared on (100) SrTiO3 sub
strates (STO) by employing a two-step process, i.e., (1) preparation of thi
n (approximately 100 nm) Re0.1Ba2CaCu2Oz precursor films using a pulsed las
er deposition technique, and (2) heat treatments in Hg-vapor atmosphere. Ho
mogeneous films with smooth surface have been obtained by simply using thin
precursor films rather than thicker ones as previously employed (more than
200 nm). The average roughness R-a is 3-4 nm and the maximum peak-to-botto
m surface roughness was about 10 nm. As-fabricated films exhibited the high
est transport J(c) value of 1.0 x 10(7) A/cm(2) at 77 K in a self-field, al
so indicating a substantial improvement. (C) 2000 Elsevier Science B.V. All
rights reserved.